Entanglement Dynamics of Strongly-AC-Driven Superconducting Qubits in Circuit QED

We study the entanglement dynamics between two strongly-AC-driven superconducting charge qubits coupled collectively to a zero temperature, dissipative resonator and find an unusual feather that the competing of creation and annihilation of entanglement can lead to entanglement increasing, sudden death and revival. We also calculate the dependence of the death time on the initial state of the system.     

Entanglement Dynamics of Three Superconducting Charge Qubits Coupled to a Cavity

We investigate the entanglement dynamics of a quantum system consisting of three superconducting charge qubits (SCQs) interacting with a microwave field. For separable and entangled states of the SCQs, the evolutions are studied under various photon numbers of cavity field. The results show that the amplitude and period of the bipartite entanglement square concurrences can be controlled by the choice of initial states of SCQs and photon numberof cavity field, respectively. This simple model of a quantum register allows us to understand the dynamic process of the quantum storage of information carried by charge qubit.     

σ-单键连接的TTF吡啶衍生物对Pb2+的识别

设计合成了一类σ-单键连接的TTF吡啶化合物T4Py和TB,并研究了化合物T4Py对离子的识别作用.结果发现Pb²⁺离子能够引起T4Py的溶液颜色、¹HNMR以及电化学CV的显著变化.     

基于分子内电荷转移机制的巯基荧光比色化学传感器

设计并合成了以香豆素为荧光发色团的多氰基分子化合物TCC。分子内强烈的电荷转移效应使得其本身荧光较弱。巯基化合物如半胱氨酸（Cys）、高半胱氨酸（Hcy）和还原型谷胱甘肽（GSH）的加入能与TCC中的三氰基乙烯基进行加成反应从而破坏分子内电荷转移,使分子内电荷转移吸收峰消失,颜色由紫色变成黄绿色,最大吸收波长由560 nm移至380 nm。并且化合物的荧光也随着巯基化合物的加入逐渐增强,荧光的强度与巯基化合物的浓度有很好的线性关系,检测限可以达到10^-5 mol/L。其它离子与不含巯基的氨基酸则不会与化合物TCC发生上述反应,也就不会对体系的吸收和荧光光谱产生明显的影响,从而实现高效、专一的识别巯基化合物。     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

球形和等长径圆柱装药在爆炸近区内载荷差异的实验研究

为了研究爆炸近区内装药形状对爆炸载荷的影响,运用压杆法测量了爆炸容器内壁的压力。通过 实验发现,对于圆柱装药径向方向上的正反射爆炸载荷,等长径圆柱装药的压力峰值、冲量与相同当量下球形 装药对应量的比最大超过2。还通过实验验证了数值模拟,并运用数值模拟获得2种装药形状下爆炸载荷的 静水压、密度、粒子速度,得到爆炸近区内2种装药形状载荷的差异以及该差异随爆心距离的变化规律。     

Microhydration of Alanine in Gas Phase Studied by Quantum Chemical Method and ABEEMσπ/MM Fluctuating Charge Model

A fluctuating charge interaction potential function for alanine-water was constructed in the spirit of newly developed ABEEMσπ/MM(atom-bond electronegativity equalization method at the σπ level fused into molecular mechanics). The properties of gaseous neutral alanine-(H₂O)_n(n=1-7) clusters were systematically investigated by quantum mechanics(QM) and the constructed ABEEMσπ/MM potential, such as conformations, hydrogen bonds (H-bonds), interaction energies, charge distributions, and so on. The results of ABEEMσπ/MM model are in fair agreement with those of QM and available experimental data. For isolated alanine, compared with those of experimental structure, the average absolute deviations(AAD) of bond length and bond angle are 0.002 nm and 1.4°, respectively. For alanine-water clusters, the AAD of interaction energies and H-bond lengths are only 3.77 kJ/mol and 0.012 nm, respectively, compared to the results of MP2/aug-cc-pVDZ//MP2/6-311+G^** method. The ABEEMσπ charges fluctuate with the changing conformation of the system, and can accurately and reasonably reflect the interpolarization between water and alanine. The presented alanine-water potential function may provide a basis for further simulations on related aqueous solutions of biomolecules.     

磷酸修饰对纳米Fe2O3热稳定性及光催化性能的影响

通过溶液浸渍蒸干过程实现了磷酸对Fe₂O₃纳米粒子的表面修饰, 研究了磷酸修饰对纳米Fe₂O₃的热稳定性及光催化活性的影响. 结果表明, 磷酸修饰显著提高了Fe₂O₃的热稳定性, 主要归因于磷酸修饰在样品表面抑制了粒子之间的团聚生长. 同时, 在光催化降解气相乙醛和液相苯酚的测试中, 磷酸修饰后热处理温度为600 ℃的样品表现出了最佳的可见光催化性能, 这主要归因于该样品具有高晶化度、 小粒子尺寸及大比表面积, 并且适量的修饰有利于其光催化性能的提高.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.